| PART |
Description |
Maker |
| 1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9
Diode Switching 100V 240A 2-Pin DO-9
Diode Switching 1KV 300A 2-Pin DO-9
Diode Switching 1.4KV 240A 2-Pin DO-9
Diode Switching 300V 240A 2-Pin DO-9
Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
| BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE
High Voltage Switching Diode
|
ON Semiconductor
|
| CS493302-CL CS493102-CL CS493264-CL CS493254-CL CS |
DIODE SWITCHING SOT23 (AV)
SMT DIODE SWITCHING DAN217 SC-59, ROHS
Multi-Standard Audio Decoder Family SPECIALTY CONSUMER CIRCUIT, PQCC44
|
Cirrus Logic, Inc.
CIRRUS LOGIC INC
|
| BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
| MMBD7000LT1 ON2085 |
Dual Switching Diode
DUAI SWITCHING DIODE
From old datasheet system
|
MOTOROLA INC
ON Semi
MOTOROLA[Motorola, Inc]
|
| CPD74 |
Switching Diode Monolithic Isolated Quad Switching Diode Chip
|
Central Semiconductor Corp
|
| M1MA142WKT1 M1MA141WK M1MA141WKT1 ON0326 M1MA141WK |
From old datasheet system
SC-70/SOT-323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
COMMON CATHODE DUAL SWITCHING DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Inc
|
| BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
0.4 A, 325 V, SILICON, SIGNAL DIODE
HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
| BAS16 Q62702-F739 |
Silicon Switching Diode (For high-speed switching) 0.25 A, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
